Scalable Small Signal and Noise Modeling of InP HEMT for THz Application

Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions the parameters of intrinsic part are derived from an accurate equivalent circuit model. The experimental theoretical results show that at same bias condition, good scaling can be achieved between HEMTs with different gate widths. Model verification carried out by comparison measured simulated S-parameters up to 325 GHz 40GHz. Good agreement obtained 90 nm gate-length devices widths including $2\times 15\,\,\mu \text{m}$ , 20\,\,\mu 25\,\,\mu width (number fingers notation="LaTeX">$\times $ unit cells). model used predict performance geometry accurately.